Advanced low electrostatic field transistor

Abstract

Device scaling has increased the device density of integrated circuits (ICs) and reduced the cost of circuits. Today development of new device structures, use of new materials and complex process steps are implemented to continue scaling of the semiconductor devices. The added manufacturing steps and complexity have increased cost of ICs directly impacting the implementation of IoT devices that need low cost and high yields to be successful. ALEFT-M-LTSEE is a device that reduces cost while improving device performance by S/D resistance reduction. ALEFT-M-LTSEE enable scaling of gate and channel lengths while reducing impact of random threshold variation due to discrete dopants in and around the channel. By creating a flat field profile at the gate by use of low temperature epitaxy as source/drain extension, the short channel effects, and the impact of line edge variations of the gate are reduced.