The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Feb. 11, 2024
Lodestar Licensing Group Llc, Evanston, IL (US);
Kamal M. Karda, Boise, ID (US);
Akira Goda, Tokyo, JP;
Sanh D. Tang, Meridian, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Litao Yang, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Lodestar Licensing Group LLC, Evanston, IL (US);
Abstract
A transistor comprises a 2D material structure and a gate structure. The 2D material structure conformally extends on and between surfaces of dielectric fin structures extending in parallel in a first horizontal direction, and comprises a source region, a drain region, and a channel region positioned between the source region and the drain region in the first horizontal direction. The gate structure overlies the channel region of the 2D material structure and extends in a second horizontal direction orthogonal to the first horizontal direction. The gate structure is within horizontal boundaries of the channel region of the 2D material structure in the first horizontal direction. Microelectronic devices, memory devices, and electronic systems are also described.