The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Jul. 15, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Masanao Ito, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2005.12); H01L 21/265 (2005.12); H01L 29/06 (2005.12); H01L 29/47 (2005.12); H02M 7/5387 (2006.12);
U.S. Cl.
CPC ...
H01L 29/7811 (2012.12); H01L 21/26586 (2012.12); H01L 29/0696 (2012.12); H01L 29/47 (2012.12); H02M 7/53871 (2012.12);
Abstract
A semiconductor device includes a semiconductor layer including a super junction layer in which an n-type pillar layer and a p-type pillar layer are alternately disposed and a p-type withstand voltage holding structure formed on an upper layer part of the semiconductor layer to surround an active region. At least one withstand voltage holding structure overlaps with the super junction layer in a plan view. At least one withstand voltage holding structure overlapping with the super junction layer in a plan view has a gap which is an intermittent part of the withstand voltage holding structure.