The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Jan. 22, 2022
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventor:
Tetsutaro Imagawa, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2005.12); H01L 29/06 (2005.12); H01L 29/417 (2005.12); H01L 29/739 (2005.12);
U.S. Cl.
CPC ...
H01L 29/0638 (2012.12); H01L 21/26506 (2012.12); H01L 29/41708 (2012.12); H01L 29/7397 (2012.12);
Abstract
Provided is a semiconductor device having a transistor portion and a diode portion, including: a drift region of a first conductivity type provided in a semiconductor substrate; an accumulation region of a first conductivity type provided on a front surface side of the semiconductor substrate with respect to the drift region in the transistor portion and the diode portion; and a first lifetime control region provided on the front surface side of the semiconductor substrate in the transistor portion and the diode portion.