The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Jul. 21, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Moon Jung An, Hwaseong-si, KR;

Hye Lim Kang, Hwaseong-si, KR;

Min Young Kim, Cheonan-si, KR;

Dong Eon Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 59/70 (2022.12); H01L 27/15 (2005.12); H01L 33/00 (2009.12); H01L 33/24 (2009.12); H01L 33/38 (2009.12); H01L 33/44 (2009.12);
U.S. Cl.
CPC ...
H01L 27/156 (2012.12); H01L 33/0093 (2020.04); H01L 33/24 (2012.12); H01L 33/38 (2012.12); H01L 33/44 (2012.12); H01L 2933/0016 (2012.12); H01L 2933/0025 (2012.12);
Abstract

A light-emitting element, a method of fabricating a light-emitting element, and a display device comprising a light-emitting element are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and second semiconductor layer, an electrode layer disposed on the second semiconductor layer, an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer and an insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.


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