The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Jun. 19, 2022
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Tamiko Asano, Hino, JP;

Michio Tamate, Hachioji, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2005.12); H01L 23/498 (2005.12); H01L 25/07 (2005.12);
U.S. Cl.
CPC ...
H01L 25/072 (2012.12); H01L 23/49844 (2012.12); H01L 24/48 (2012.12); H01L 2224/48155 (2012.12);
Abstract

Provided is a semiconductor module having a P-side arm circuit and an N-side arm circuit. The semiconductor module comprises: a P terminal on a high-voltage side; an N terminal on a low-voltage side; a plurality of wiring patterns separated from each other; and a transistor and a diode connected in parallel in each of the circuits, wherein the plurality of wiring patterns include a first wiring pattern, a second wiring pattern, and a third wiring pattern, the P terminal is connected to the first wiring pattern, the N terminal is connected to the second wiring pattern, an anode electrode of the diode of the N-side arm circuit is arranged above the second wiring pattern and is connected to the second wiring pattern, and an anode electrode of the diode of the P-side arm circuit is arranged above the third wiring pattern and is connected to the third wiring pattern.


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