Power semiconductor device and manufacturing method of power semiconductor device

Abstract

A problem is that close contact with a heat dissipation surface of a power semiconductor device is not sufficient, and thus heat dissipation performance is low. A thermally conductive layerabuts on a heat dissipation surfaceof a circuit body, and a heat dissipation memberabuts on the outside of the thermally conductive layer, which is a side of the heat dissipation surfaceof the circuit body. A fixing memberabuts on a side of the circuit bodyopposite to the heat dissipation surface. A connection memberis penetrated at the respective end portions of the heat dissipation memberand the fixing member. FIG.illustrates a state before a bolt and a nut of the connection memberare tightened. The heat dissipation memberholds a curved shape such that the central portion of the heat dissipation memberprotrudes toward the circuit body. The bolt and the nut of the connection memberare fastened and fixed at both ends of the heat dissipation memberand the fixing memberso as to sandwich the circuit body. The heat dissipation memberis elastically deformed to bring the heat dissipation memberinto close contact with the heat dissipation surfaceof the circuit bodyvia the thermally conductive layer, and surface pressure is applied from the heat dissipation memberto the heat dissipation surface