The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Jun. 29, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chun-Shun Huang, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2005.12); H01L 21/311 (2005.12); H01L 21/3213 (2005.12);
U.S. Cl.
CPC ...
H01L 22/32 (2012.12); H01L 21/31116 (2012.12); H01L 21/32135 (2012.12); H01L 22/20 (2012.12);
Abstract
A method of manufacturing semiconductor testing structure includes providing a substrate; forming a first metal layer on the substrate, wherein the first metal layer comprises a plurality of fingers extending along a first direction; forming a dielectric structure on the first metal layer; and forming a plurality of second metal layers on the dielectric structure.