The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Jun. 27, 2023
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventor:
Chiyu Zhu, Helsinki, FI;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2005.12); H01L 21/02 (2005.12);
U.S. Cl.
CPC ...
H01L 21/7682 (2012.12); H01L 21/02164 (2012.12); H01L 21/02167 (2012.12); H01L 21/02175 (2012.12); H01L 21/02271 (2012.12); H01L 21/0228 (2012.12); H01L 21/76832 (2012.12);
Abstract
A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.
Quick Actions:
Zhu, Chiyu. (2025). Selective deposition method to form air gaps (U.S. Patent No. 12283520). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12283520
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile