The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
May. 05, 2022
Applicant:
Ferroelectric Memory Gmbh, Dresden, DE;
Inventor:
Stefano Sivero, Comun Nuovo, IT;
Assignee:
FERRORELECTRIC MEMORY GMBH, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2005.12); G11C 8/08 (2005.12);
U.S. Cl.
CPC ...
G11C 8/08 (2012.12);
Abstract
Disclosed herein is a memory arrangement and method thereof for locally marking bad memory cells. The memory arrangement includes a group of memory cells and a driver circuit for operating the group of memory cells. The driver circuit includes a remanent-polarizable memory element (e.g., a remanent-polarizable field-effect transistor). Depending on a memory state of the remanent-polarizable memory element, the driver circuit enables or disables the operation (e.g., a read/write operation) on the group of memory cells.