The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

May. 19, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Haruhiko Terada, Kanagawa, JP;

Yotaro Mori, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2005.12);
U.S. Cl.
CPC ...
G11C 13/0026 (2012.12); G11C 13/0028 (2012.12); G11C 13/0038 (2012.12);
Abstract

A semiconductor device according to an embodiment of the present disclosure includes: a memory cell array including a plurality of first selection lines extending in a first direction, a plurality of second selection lines extending in a second direction, and a plurality of memory cells each provided between the plurality of first selection lines and the plurality of second selection lines; a voltage generator that is configured to generate a selection voltage to be applied to one of the plurality of first selection lines; and a decoder section that includes a plurality of selection transistors and a gate driving section, and selects one of the plurality of first selection lines and applies the selection voltage to the selected first selection line, the plurality of selection transistors each provided in a plurality of selection paths coupling the plurality of first selection lines and the voltage generator, the gate driving section that drives gates of the plurality of transistors and is configured to apply a first driving voltage to the gates of the plurality of transistors, the first driving voltage being a positive voltage exceeding a withstand voltage of the plurality of selection transistors.


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