The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Oct. 24, 2023
Fujifilm Corporation, Tokyo, JP;
Hiroshi Sato, Minamiashigara, JP;
Katsumi Sasata, Minamiashigara, JP;
Yukito Saitoh, Minamiashigara, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
Provided is a sensor having a high SN ratio. The sensor includes a light source, a band pass filter, and a light-receiving element, in which the band pass filter includes two cholesteric liquid crystal layers and a discontinuous layer disposed between the two cholesteric liquid crystal layers, in the two cholesteric liquid crystal layers, helical twisted directions and helical pitches are the same, and in a case where the discontinuous layer is a layer other than a cholesteric liquid crystal layer and a wavelength having a lowest reflectivity in a selective reflection wavelength range of the band pass filter is represented by λm [nm], a thickness [nm] is in a range of '30×(λm/550) to 150×(λm/550)'.