The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Jan. 12, 2022
Applicant:

Industry-academic Cooperation Foundation Yonsei University, Seoul, KR;

Inventors:

Jae Won Hahn, Seoul, KR;

Hyeon Bo Shim, Seoul, KR;

Ki Wook Han, Gyeonggi-do, KR;

Joo Kwon Song, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 5/20 (2005.12); B32B 3/26 (2005.12); B32B 7/023 (2018.12); B32B 7/025 (2018.12); F41H 3/00 (2005.12); G02B 5/00 (2005.12);
U.S. Cl.
CPC ...
G02B 5/204 (2012.12); B32B 3/266 (2012.12); B32B 7/023 (2018.12); B32B 7/025 (2018.12); F41H 3/00 (2012.12); G02B 5/008 (2012.12); G02B 5/208 (2012.12);
Abstract

Disclosed is a stealth device that has a double-band stealth function against millimeter-wavelength electromagnetic waves, has high absorption at a near-infrared laser wavelength, and has low emissivity of mid-infrared light and long-infrared light. The stealth device includes a wavelength-selective absorption pattern layer made of a material having electrical conductivity, wherein the wavelength-selective absorption pattern layer is composed of conductive thin-film patterns capable of causing plasmonic resonance at a first wavelength and a second wavelength different from the first wavelength; and a dielectric layer disposed below the wavelength-selective absorption pattern layer and made of a dielectric material.


Find Patent Forward Citations

Loading…