The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

May. 02, 2021
Applicant:

Guangdong Fenghua Advanced Technology Holding Co., Ltd., Guangdong, CN;

Inventors:

Shiwo Ta, Guangdong, CN;

Xiaozhou Wang, Canberra, AU;

Tao Chen, Guangdong, CN;

Yun Liu, Canberra, AU;

Terry James Frankcombe, Canberra, AU;

Zhenxiao Fu, Guangdong, CN;

Xiuhua Cao, Guangdong, CN;

Chunyuan Hu, Guangdong, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 35/488 (2005.12); C04B 35/14 (2005.12); C04B 35/624 (2005.12); C04B 35/626 (2005.12); C04B 35/64 (2005.12);
U.S. Cl.
CPC ...
C04B 35/488 (2012.12); C04B 35/14 (2012.12); C04B 35/624 (2012.12); C04B 35/6261 (2012.12); C04B 35/64 (2012.12); C04B 2235/3201 (2012.12); C04B 2235/3208 (2012.12); C04B 2235/3244 (2012.12); C04B 2235/3409 (2012.12); C04B 2235/3418 (2012.12); C04B 2235/5436 (2012.12); C04B 2235/5445 (2012.12); C04B 2235/656 (2012.12);
Abstract

Disclosed is a low temperature co-fired dielectric material with an adjustable dielectric constant, wherein it comprises a zirconia main phase and a silicon-based amorphous filler, a weight ratio of the zirconia main phase to the silicon-based amorphous filler is 40-65:35-60; a weight percentage of SiOin the silicon-based amorphous filler is ≥50%. The dielectric constant of low temperature co-fired dielectric material can be continuously adjusted in a wide range of 7-12, the dielectric loss can be as low as 0.1% at 1 MHz. The material system can be sintered at 800-900° C. and co-fired with silver electrode. It can be used as the low temperature co-fired dielectric material. The invention also discloses a method for preparing the low temperature co-fired dielectric material with an adjustable dielectric constant.


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