The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

May. 30, 2021
Applicants:

Beijing Boe Technology Development Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Dong Li, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/16 (2022.12); H10K 50/115 (2022.12); H10K 71/13 (2022.12); H10K 101/40 (2022.12); H10K 102/00 (2022.12);
U.S. Cl.
CPC ...
H10K 50/166 (2023.01); H10K 50/115 (2023.01); H10K 71/13 (2023.01); H10K 2101/40 (2023.01); H10K 2102/351 (2023.01);
Abstract

Embodiments of the present disclosure provide a quantum dot light emitting diode, a method for manufacturing a quantum dot light emitting diode and a display device. The quantum dot light emitting diode includes an anode layer, a cathode layer, a quantum dot light emitting layer between the anode layer and the cathode layer, and an electron transport layer between the cathode layer and the quantum dot light emitting layer, the electron transport layer includes at least a first energy level structure layer, a second energy level structure layer, and another first energy level structure layer, which are sequentially stacked, the first energy level structure layer is different from the second energy level structure layer, and a Lowest Unoccupied Molecular Orbital energy level of the first energy level structure layer is different from that of the second energy level structure layer.


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