The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Feb. 06, 2020
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventor:

Franz Eberhard, Kilchberg, CH;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/857 (2024.12); H10H 20/01 (2024.12); H10H 20/831 (2024.12);
U.S. Cl.
CPC ...
H10H 20/857 (2024.12); H10H 20/01 (2024.12); H10H 20/8316 (2024.12); H10H 20/0364 (2024.12);
Abstract

An optoelectronic semiconductor device may include a first and second semiconductor layer having a first and second conductivity type, respectively, a first contact structure, a contact layer, and a separating layer. Contact holes are arranged in the separating layer. The optoelectronic semiconductor device may include portions of a conductive layer arranged over a side of the separating layer facing away from the contact layer. The portions of the conductive layer are each connected to a conducting material in the contact holes. The first contact structure is connected to the contact layer via the portions of the conductive layer and the conducting material. A length of each of the portions is greater than a greatest width of the portions. The length denotes a shortest distance between an associated contact hole and a conductive material between adjacent portions, and the width is measured perpendicular to the length.


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