The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Oct. 26, 2023
Applicant:

Xiamen Tianma Micro-electronics Co., Ltd., Xiamen, CN;

Inventors:

Qingjun Lai, Xiamen, CN;

Yihua Zhu, Xiamen, CN;

Yong Yuan, Xiamen, CN;

Ping An, Xiamen, CN;

Zhaokeng Cao, Xiamen, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G09G 3/3225 (2015.12); H10D 86/40 (2024.12); H10D 86/60 (2024.12); H10K 59/121 (2022.12);
U.S. Cl.
CPC ...
H10D 86/60 (2024.12); G09G 3/3225 (2012.12); H10D 86/431 (2024.12); H10D 86/471 (2024.12); G09G 2300/0426 (2012.12); G09G 2300/0465 (2012.12); G09G 2300/0814 (2012.12); G09G 2300/0842 (2012.12); H10D 86/423 (2024.12); H10K 59/1213 (2023.01);
Abstract

A display panel includes a base substrate, a third transistor and a fourth transistor. The third transistor and the fourth transistor are formed on the base substrate. The third transistor includes a sixth gate electrode, a third active layer, a third source electrode, and a third drain electrode. The third active layer includes an oxide semiconductor. The fourth transistor includes an eighth gate electrode, a fourth active layer, a fourth source electrode, and a fourth drain electrode. The fourth active layer includes another oxide semiconductor. Along a direction perpendicular to the base substrate, a distance between the sixth gate electrode and the third active layer is D. A channel region of the third transistor defined by the sixth gate electrode is a sixth channel region. A length of the sixth channel region is L. A sixth area S=L×D


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