The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Sep. 17, 2022
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device includes an epitaxial layer, at least one gate trench, and at least one trench gate structure. The gate trench includes a lower gate trench and an upper gate trench, and a width of the lower gate trench is less than a width of the upper gate trench. The trench gate structure is disposed in the gate trench, and the trench gate structure includes a bottom gate structure, a middle gate structure, and a top gate structure. The thickness of the second gate dielectric layer of the middle gate structure is less than the thickness of the first gate dielectric layer of the bottom gate structure. The thickness of the third gate dielectric layer of the top gate structure is less than the thickness of the second gate dielectric layer of the middle gate structure. The first, second, and third gate electrodes are separated from each other.