The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Sep. 22, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Youseung Jin, Ballston Spa, NY (US);

Elnatan Mataev, Poughkeepsie, NY (US);

Jonathan Fry, Fishkill, NY (US);

Dominic Rossillo, Highland, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2005.12); H01L 29/66 (2005.12); H01L 29/78 (2005.12); H10B 10/00 (2022.12); H10D 30/01 (2024.12); H10D 30/62 (2024.12); H10D 64/01 (2024.12); H10D 64/66 (2024.12);
U.S. Cl.
CPC ...
H10D 64/017 (2024.12); H10B 10/12 (2023.01); H10B 10/18 (2023.01); H10D 30/024 (2024.12); H10D 30/62 (2024.12); H10D 64/671 (2024.12);
Abstract

Zero expanded functional gate structures are formed by utilizing a dipole material spacer as a means to prevent expanded void formation during a replacement metal gate process. Notably, the dipole material spacer prevents expanded void formation into the dielectric spacer thus preventing the functional gate structures from being in direct physical contact with the source/drain regions. Improvement in yield loss and reliability is thus provided utilizing a dipole material spacer during a replacement metal gate process.


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