The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Jun. 23, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Takaaki Tominaga, Tokyo, JP;
Shiro Hino, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
The present disclosure relates to a silicon carbide semiconductor device, and includes a p-type second well region provided as an upper layer portion of a semiconductor layer; an n-type second impurity region provided as an upper layer portion of the second well region; a p-type second well contact region provided as an upper layer portion of the second well region; a field insulating film provided on the second well region; a second contact passed through the field insulating film electrically connected to a first main electrode; a boundary gate insulating film provided on a boundary between the element region and the non-element region; a boundary gate electrode provided on the boundary gate insulating film; and a second main electrode. The second well contact region extends from below the second contact toward the element region, and the second impurity region extends from below the second contact toward the non-element region.