The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

May. 14, 2023
Applicant:

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Sanghun Jeon, Daejeon, KR;

Taeho Kim, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/30 (2022.12); G11C 11/22 (2005.12); H10B 51/20 (2022.12);
U.S. Cl.
CPC ...
H10B 51/30 (2023.01); G11C 11/223 (2012.12); G11C 11/2275 (2012.12); H10B 51/20 (2023.01);
Abstract

Disclosed are a non-volatile memory including a negative capacitance blocking oxide layer, an operating method of the same, and a manufacturing method of the same. The non-volatile memory may include a tunneling oxide layer formed on a channel; a charge storage layer formed on one surface of the tunneling oxide layer; a negative capacitance blocking oxide layer in which a dielectric layer and an imprinted polarization layer are sequentially configured on one surface of the charge storage layer; and a gate formed on one surface of the negative capacitance blocking oxide layer.


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Jeon, Sanghun. (2025). Non-volatile memory including negative capacitance blocking oxide layer, operating method of the same and manufacturing method of the same (U.S. Patent No. 12279436). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12279436

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