The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Feb. 28, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyunghwan Lee, Seoul, KR;

Yongseok Kim, Suwon-si, KR;

Hyuncheol Kim, Seoul, KR;

Jongman Park, Hwaseong-si, KR;

Dongsoo Woo, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2022.12); H10B 51/10 (2022.12); H10B 51/40 (2022.12);
U.S. Cl.
CPC ...
H10B 51/20 (2023.01); H10B 51/10 (2023.01); H10B 51/40 (2023.01);
Abstract

A semiconductor device includes first conductive lines provided on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, second conductive lines spaced apart from the first conductive lines in a second direction parallel to the top surface of the substrate, a gate electrode disposed between the first and second conductive lines and extended in the first direction, a plurality of channel patterns provided to enclose a side surface of the gate electrode and spaced apart from each other in the first direction, a ferroelectric pattern between each of the channel patterns and the gate electrode, and a gate insulating pattern between each of the channel patterns and the ferroelectric pattern. Each of the channel patterns is connected to a corresponding one of the first conductive lines and a corresponding one of the second conductive lines.


Find Patent Forward Citations

Loading…