The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Apr. 14, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Changbum Kim, Seoul, KR;

Sunghoon Kim, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/40 (2022.12); G11C 16/24 (2005.12); H10B 41/27 (2022.12); H10B 41/41 (2022.12); H10B 43/27 (2022.12);
U.S. Cl.
CPC ...
H10B 43/40 (2023.01); G11C 16/24 (2012.12); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01);
Abstract

A semiconductor device includes a cell region and a peripheral circuit region. The cell region includes gate electrode layers stacked on a substrate, channel structures extending in a first direction, extending through the gate electrode layers, and connected to the substrate, and bit lines extending in a second direction and connected to the channel structures above the gate electrode layers. The peripheral circuit region includes page buffers connected to the bit lines. Each page buffer includes a first and second elements adjacent to each other in the second direction and sharing a common active region between a first gate structure of the first element and a second gate structure of the second element in the second direction. Boundaries of the common active region include an oblique boundary extending in an oblique direction forming an angle between 0 and 90 degrees with the second direction.


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