The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

May. 22, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Na-Young Kim, Seoul, KR;

Seongho Kim, Seoul, KR;

Hoonmin Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 41/42 (2022.12); H10B 41/41 (2022.12);
U.S. Cl.
CPC ...
H10B 41/42 (2023.01); H10B 41/41 (2023.01);
Abstract

A semiconductor device includes a substrate including cell and peripheral regions. Landing pads and contact plugs are on the cell and peripheral regions, respectively. A first filler pattern fills regions between the landing pads and between the contact plugs. Outer voids are in the first filler pattern and include first and second outer voids on the cell and peripheral regions, respectively. A second filler pattern covers the first filler pattern and the contact plugs and fills at least a portion of the second outer void. An inner void is in the second outer void and enclosed by the second filler pattern. The first and second filler patterns include the same material. On the cell region, at least a portion of the second filler pattern is located below top surfaces of the landing pads, and a bottom surface of the second filler pattern is partially exposed by the first outer void.


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