The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Jun. 15, 2022
Applicant:
Socionext Inc., Kanagawa, JP;
Inventor:
Yasumitsu Sakai, Yokohama, JP;
Assignee:
SOCIONEXT INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 20/00 (2022.12); H01L 29/06 (2005.12); H01L 29/423 (2005.12); H01L 29/786 (2005.12);
U.S. Cl.
CPC ...
H10B 20/34 (2023.01); H01L 29/0665 (2012.12); H01L 29/42392 (2012.12); H01L 29/78696 (2012.12);
Abstract
In a semiconductor storage device, a first ROM cell includes a first nanosheet FET having a first nanosheet as the channel region, provided between a first bit line and a first ground power supply line. A second ROM cell includes a second nanosheet FET having a second nanosheet as the channel region, provided between a second bit line and a second ground power supply line. The face of the first nanosheet closer to the second nanosheet in the X direction is exposed from a first gate interconnect, and the face of the second nanosheet closer to the first nanosheet in the X direction is exposed from a second gate interconnect.