The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

May. 12, 2020
Applicant:

Stanley Electric Co., Ltd., Tokyo, JP;

Inventors:

Yoshiaki Yasuda, Tokyo, JP;

Hirofumi Chiba, Tokyo, JP;

Mitsuyasu Kumagai, Tokyo, JP;

Yukio Suzuki, Miyagi, JP;

Shuji Tanaka, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/64 (2009.12); H01L 23/00 (2005.12); H01L 33/32 (2009.12); H01L 33/48 (2009.12); H01L 33/60 (2009.12); H01L 33/62 (2009.12); H01S 5/02 (2005.12); H01S 5/042 (2005.12); H01S 5/183 (2005.12);
U.S. Cl.
CPC ...
H01L 33/647 (2012.12); H01L 24/05 (2012.12); H01L 24/06 (2012.12); H01L 24/29 (2012.12); H01L 24/32 (2012.12); H01L 24/83 (2012.12); H01L 33/486 (2012.12); H01L 33/60 (2012.12); H01L 33/62 (2012.12); H01L 24/30 (2012.12); H01L 24/33 (2012.12); H01L 33/32 (2012.12); H01L 2224/0557 (2012.12); H01L 2224/05571 (2012.12); H01L 2224/05655 (2012.12); H01L 2224/06132 (2012.12); H01L 2224/29013 (2012.12); H01L 2224/29023 (2012.12); H01L 2224/29111 (2012.12); H01L 2224/29144 (2012.12); H01L 2224/30505 (2012.12); H01L 2224/30517 (2012.12); H01L 2224/32014 (2012.12); H01L 2224/32111 (2012.12); H01L 2224/32145 (2012.12); H01L 2224/32225 (2012.12); H01L 2224/33106 (2012.12); H01L 2224/83815 (2012.12); H01L 2224/8383 (2012.12); H01L 2924/01322 (2012.12); H01L 2924/12041 (2012.12); H01L 2933/0066 (2012.12); H01L 2933/0075 (2012.12); H01S 5/021 (2012.12); H01S 5/04256 (2019.07); H01S 5/183 (2012.12);
Abstract

In a light emitting device, in a bottom surface of a cavity of a Si substrate, slit-shaped through holes and through electrodes that fill the through holes are provided at a position facing a first element electrode of a light emitting element. A length of an upper surface of the through electrode in a long axis direction is larger than a height of the through electrode in a thickness direction of the Si substrate. A joining layer having a shape corresponding to a shape of the upper surface of the through electrode is disposed between the first element electrode of the light emitting element and the upper surface of the through electrode facing the first element electrode. The entire upper surface of the through electrode is joined to the first element electrode via the joining layer.


Find Patent Forward Citations

Loading…