The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Feb. 21, 2021
Mellanox Technologies, Ltd., Yokneam, IL;
Yuri Berk, Kirvat Tivon, IL;
Vladimir Iakovlev, Ecublens, CH;
Tamir Sharkaz, Kfar Tavor, IL;
Elad Mentovich, Tel Aviv, IL;
Matan Galanty, Korazim, IL;
Itshak Kalifa, Bat-Yam, IL;
Paraskevas Bakopoulos, Ilion, GR;
Mellanox Technologies, Ltd., Yokneam, IL;
Abstract
Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.