The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Feb. 19, 2024
Applicants:

Zhejiang Jinko Solar Co., Ltd., Zhejiang, CN;

Jinko Solar Co., Ltd., Jiangxi, CN;

Inventors:

Zhao Wang, Haining, CN;

Hao Jin, Haining, CN;

Mengchao Shen, Haining, CN;

Jiajia Zhu, Haining, CN;

Jie Yang, Haining, CN;

Xinyu Zhang, Haining, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/068 (2011.12); H01L 31/0224 (2005.12); H01L 31/0236 (2005.12);
U.S. Cl.
CPC ...
H01L 31/068 (2012.12); H01L 31/022425 (2012.12); H01L 31/02363 (2012.12);
Abstract

A solar cell is provided, including a substrate having a first surface and a second surface, a first dielectric layer formed on the first surface, a first doped polysilicon layer formed on the first dielectric layer, a second dielectric layer formed on the second surface, a second doped polysilicon layer formed on the second dielectric layer, a first passivation layer formed on the first doped polysilicon layer, a second passivation layer formed on the second doped polysilicon layer, first electrodes and second electrodes. The first doped polysilicon layer is doped with an N-type doping element and has a surface having a first roughness, the second doped polysilicon layer is doped with a P-type doping element and has a surface having a second roughness, and the second roughness is less than the first roughness.


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