The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Aug. 01, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Takahiro Kato, Yokohama, JP;

Tatsunori Sakano, Shinagawa, JP;

Yusuke Kobayashi, Yokohama, JP;

Ryohei Gejo, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2005.12); H01L 29/06 (2005.12); H01L 29/10 (2005.12); H01L 29/417 (2005.12); H01L 29/423 (2005.12);
U.S. Cl.
CPC ...
H01L 29/7397 (2012.12); H01L 29/0696 (2012.12); H01L 29/1095 (2012.12); H01L 29/41708 (2012.12); H01L 29/4238 (2012.12);
Abstract

According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to sixth semiconductor regions. The third semiconductor region includes first and second partial regions. A part of the fourth semiconductor region is between the second partial and second semiconductor regions. The fifth semiconductor region is between the second partial region and a part of the fourth semiconductor region. The sixth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The fourth electrode is between the first partial region and the third electrode. A part of the insulating member is provided between the semiconductor member and the third electrode, between the semiconductor member and the fourth electrode, and between the third and fourth electrodes.


Find Patent Forward Citations

Loading…