The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Sep. 24, 2020
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventors:
Kentaro Nasu, Kyoto, JP;
Takaaki Yoshioka, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2005.12); H01L 29/16 (2005.12); H01L 29/66 (2005.12); H01L 29/78 (2005.12);
U.S. Cl.
CPC ...
H01L 29/0696 (2012.12); H01L 29/1608 (2012.12); H01L 29/66068 (2012.12); H01L 29/7813 (2012.12);
Abstract
A semiconductor device includes a semiconductor chip having a main surface, a first conductivity type drift layer formed in a surface layer portion of the main surface, a trench gate structure formed in the main surface such as to be in contact with the drift layer, a second conductivity type channel region formed in the drift layer such as to cover a side wall of the trench gate structure, and first and second source/drain regions formed at intervals in a region along the side wall of the trench gate structure in the drift layer such as to oppose each other across the channel region.