The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Dec. 28, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Euncheol Do, Seoul, KR;

Byunghoon Na, Suwon-si, KR;

Kiyoung Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2022.12); H01G 4/33 (2005.12); H01L 49/02 (2005.12);
U.S. Cl.
CPC ...
H01L 28/75 (2012.12); H01G 4/33 (2012.12); H01L 28/55 (2012.12); H01L 28/91 (2012.12); H10B 12/0387 (2023.01); H10B 12/377 (2023.01);
Abstract

Provided are a capacitor, an electronic device including the same, and a method of manufacturing the same, the capacitor including a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer between the dielectric and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a same crystal structure type as and a different composition from at least one of the first thin film electrode layer, the second thin film electrode layer, or the dielectric layer, the interlayer including at least one of a anionized layer or a neutral layer.


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