The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Jul. 09, 2020
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Takayuki Ikeda, Atsugi, JP;

Hitoshi Kunitake, Isehara, JP;

Koji Kusunoki, Isehara, JP;

Yoshiaki Oikawa, Atsugi, JP;

Shunpei Yamazaki, Setagaya, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01Q 1/24 (2005.12); H01L 27/12 (2005.12); H04M 1/02 (2005.12); H10K 59/00 (2022.12); H10K 59/40 (2022.12); H10K 59/131 (2022.12);
U.S. Cl.
CPC ...
H01L 27/1255 (2012.12); H01Q 1/243 (2012.12); H04M 1/0268 (2012.12); H10K 59/00 (2023.01); H10K 59/40 (2023.01); H01L 27/1225 (2012.12); H01L 27/1266 (2012.12); H04M 2250/22 (2012.12); H10K 59/131 (2023.01);
Abstract

A display device with a novel structure is provided. The display device includes a first substrate provided with a plurality of pixels including a display element, and a second substrate including a first conductive layer provided with a plurality of first openings. The first conductive layer has a function of an antenna capable of transmitting and receiving a radio signal. The pixel and the first opening include a region where the pixel and the first opening overlap with each other. The second substrate includes an element layer. The element layer includes a transistor. The transistor has a function of an amplifier capable of amplifying the radio signal. The transistor each includes a semiconductor layer including a metal oxide in a channel formation region. The metal oxide contains In, Ga, and Zn.


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