The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Nov. 08, 2021
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventor:
Hyun Chul Seo, Icheon-si Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Icheon-si Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/02 (2005.12); H01L 23/00 (2005.12); H01L 23/48 (2005.12); H01L 23/544 (2005.12);
U.S. Cl.
CPC ...
H01L 23/544 (2012.12); H01L 24/02 (2012.12); H01L 24/05 (2012.12); H01L 24/48 (2012.12); H01L 24/85 (2012.12); H01L 2223/54426 (2012.12); H01L 2223/54473 (2012.12); H01L 2224/0235 (2012.12); H01L 2224/0236 (2012.12); H01L 2224/02373 (2012.12); H01L 2224/02375 (2012.12); H01L 2224/02381 (2012.12); H01L 2224/05548 (2012.12); H01L 2224/05569 (2012.12); H01L 2224/05573 (2012.12); H01L 2224/48463 (2012.12); H01L 2224/8513 (2012.12); H01L 2224/85181 (2012.12);
Abstract
A semiconductor device includes a first redistribution layer pattern, a second redistribution layer pattern, and a recognition mark. The first redistribution layer pattern is formed on a semiconductor substrate. The second redistribution layer pattern, with a bonding pad portion, is disposed on the first redistribution layer pattern. Furthermore, the recognition mark is formed on the first redistribution layer pattern to indicate a position of the bonding pad portion.