The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
May. 31, 2020
Applicant:
Ajou University Industry-academic Cooperation Foundation, Suwon-si, KR;
Inventors:
Assignee:
AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2005.12); C09K 13/00 (2005.12); H01J 37/32 (2005.12); H01L 21/02 (2005.12); H01L 21/311 (2005.12); H01L 21/3213 (2005.12);
U.S. Cl.
CPC ...
H01L 21/3065 (2012.12); C09K 13/00 (2012.12); H01J 37/3244 (2012.12); H01L 21/02126 (2012.12); H01L 21/0214 (2012.12); H01L 21/02164 (2012.12); H01L 21/311 (2012.12); H01L 21/31116 (2012.12); H01L 21/31144 (2012.12); H01L 21/32135 (2012.12); H01L 21/32136 (2012.12); H01J 2237/334 (2012.12); Y02C 20/30 (2012.12);
Abstract
A plasma etching method includes a first step of supplying a mixed gas containing vaporized heptafluoroisopropyl methyl ether gas having a molecular structure of a following Chemical Formula 1 or vaporized heptafluoropropyl methyl ether gas having a molecular structure of a following Chemical Formula 2 and argon gas into a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas: