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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12278111 B1

PDFFull Text
Date of Patent:
Apr. 14, 2025

Filed:

May. 31, 2020

Plasma etching method

Applicant:

Ajou University Industry-academic Cooperation Foundation, Suwon-si, KR;

Inventors:

Chang-Koo Kim, Seoul, KR;

Jun-Hyun Kim, Seongnam-si, KR;

Jin-Su Park, Suwon-si, KR;

Assignee:

AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
H01L 21/3065 (2005.12); C09K 13/00 (2005.12); H01J 37/32 (2005.12); H01L 21/02 (2005.12); H01L 21/311 (2005.12); H01L 21/3213 (2005.12);
U.S. Cl.
CPC ...
H01L 21/3065 (2012.12); C09K 13/00 (2012.12); H01J 37/3244 (2012.12); H01L 21/02126 (2012.12); H01L 21/0214 (2012.12); H01L 21/02164 (2012.12); H01L 21/311 (2012.12); H01L 21/31116 (2012.12); H01L 21/31144 (2012.12); H01L 21/32135 (2012.12); H01L 21/32136 (2012.12); H01J 2237/334 (2012.12); Y02C 20/30 (2012.12);
Abstract

A plasma etching method includes a first step of supplying a mixed gas containing vaporized heptafluoroisopropyl methyl ether gas having a molecular structure of a following Chemical Formula 1 or vaporized heptafluoropropyl methyl ether gas having a molecular structure of a following Chemical Formula 2 and argon gas into a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:

Find Patent Forward Citations

Kim, Chang-Koo. (2025). Plasma etching method (U.S. Patent No. 12278111). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12278111

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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