The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Oct. 03, 2022
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Kazuhide Sumiyoshi, Osaka, JP;
Masaya Okada, Osaka, JP;
Kazutaka Inoue, Osaka, JP;
Takumi Yonemura, Osaka, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2005.12); H01L 29/20 (2005.12); H01L 29/66 (2005.12); H01L 29/778 (2005.12);
U.S. Cl.
CPC ...
H01L 21/0217 (2012.12); H01L 21/02271 (2012.12); H01L 21/0254 (2012.12); H01L 29/2003 (2012.12); H01L 29/66462 (2012.12); H01L 29/778 (2012.12);
Abstract
A semiconductor device includes a substrate, a semiconductor stacking portion formed on the substrate, a silicon nitride passivation film covering the surface of the semiconductor stacking portion, and oxygen atoms existing at an interface between the silicon nitride passivation film and the semiconductor stacking portion. The semiconductor stacking portion includes a plurality of nitride semiconductor layers. The interfacial oxygen content at the passivation film and stacking portion interface is 0.6×10oxygen atoms/cmor less.