The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Mar. 01, 2021
Applicant:
Ajou University Industry-academic Cooperation Foundation, Suwon-si, KR;
Inventors:
Chang-Koo Kim, Seoul, KR;
Jun-Hyun Kim, Seongnam-si, KR;
Assignee:
AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2005.12); H01J 37/32 (2005.12);
U.S. Cl.
CPC ...
H01J 37/32449 (2012.12); H01L 21/31116 (2012.12); H01J 2237/334 (2012.12);
Abstract
A plasma etching method is disclosed. The plasma etching method comprises: a first step for vaporizing liquid pentafluoropropanol (PFP); a second step for supplying discharge gas comprising the vaporized PFP and argon gas into a plasma chamber in which an object to be etched is placed; and a third step for discharging the discharge gas to generate plasma and etching the object by using the plasma.