The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Nov. 03, 2022
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Shinto Ichikawa, Tokyo, JP;

Katsuyuki Nakada, Tokyo, JP;

Kazuumi Inubushi, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 10/32 (2005.12); G01R 33/09 (2005.12);
U.S. Cl.
CPC ...
H01F 10/329 (2012.12); G01R 33/093 (2012.12); H01F 10/3213 (2012.12);
Abstract

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy layer. The nonmagnetic layer includes a first region and a second region in a plane. Both of the first region and the second region are formed of a metal. The second region is different in constituent material from the first region. The second region has a crystal structure of a body-centered cubic lattice structure (bcc).


Find Patent Forward Citations

Ichikawa, Shinto. (2025). Magnetoresistance effect element (U.S. Patent No. 12278033). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12278033

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…