The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Sep. 08, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyunjun Yoon, Suwon-si, KR;
Jinwoo Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Provided are a non-volatile memory device, a storage device including the same, and a method of performing a programming operation on the same. The method includes performing a program operation including applying a desired first program voltage to a selected word line of the memory device, the selected word line including a plurality of memory cells, performing a verification operation including sensing a first sensing value corresponding to an output of the selected word line based on a first verify voltage, and counting a number of on-cells of the selected word line based on the first sensing value to determine a first count value, determining whether a first program state of the selected word line has been verified based on the first count value and at least one reference value, and setting a second program voltage based on results of the determining whether the first program state has been verified.