The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Jan. 16, 2024
Applicant:

Samsung Display Co., Ltd., Yongin-Si, KR;

Inventor:

Keunwoo Kim, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H10K 59/121 (2023.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H01L 27/1274 (2013.01); H01L 29/66757 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01); H10K 59/1201 (2023.02);
Abstract

Provided are a thin-film transistor substrate that has enhanced electrical characteristics, such as off-current characteristics of a thin-film transistor, without increasing the number of mask processes, a display apparatus, and a method of manufacturing the thin-film transistor substrate. The thin-film transistor substrate includes: a semiconductor layer including a first conductive region, a second conductive region, and a first semiconductor region; a lower electrode disposed on the semiconductor layer and at least partially overlapping the first semiconductor region; and an upper electrode disposed on the lower electrode and at least partially overlapping the first semiconductor region, a first boundary between the first semiconductor region and the first conductive region coincides with an edge of the upper electrode, and a second boundary between the first semiconductor region and the second conductive region coincides with an edge of the lower electrode or an edge of the upper electrode.


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