The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Nov. 30, 2021
Applicants:

Samsung Display Co., Ltd., Yongin-Si, KR;

Postech Research and Business Development Foundation, Pohang-si, KR;

Inventors:

Jun Hyung Lim, Seoul, KR;

Yong-Young Noh, Daejeon, KR;

Soyoung Koo, Hwaseong-si, KR;

Hyungjun Kim, Seoul, KR;

Huihui Zhu, Pohang-si, KR;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 10/46 (2023.01); H10K 59/125 (2023.01); H10K 71/12 (2023.01); H10K 71/40 (2023.01); H10K 85/30 (2023.01); H10K 85/50 (2023.01);
U.S. Cl.
CPC ...
H10K 10/488 (2023.02); H10K 10/466 (2023.02); H10K 10/484 (2023.02); H10K 59/125 (2023.02); H10K 71/12 (2023.02); H10K 71/40 (2023.02); H10K 85/50 (2023.02); H10K 85/30 (2023.02);
Abstract

A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: ABC[XY], where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.


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