The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Mar. 29, 2022
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Dajiang Yang, Cupertino, CA (US);

Hong Wei Lee, San Jose, CA (US);

Xiaofeng Fan, San Jose, CA (US);

Oray O. Cellek, Santa Cruz, CA (US);

Xiangli Li, Palo Alto, CA (US);

Kai Shen, San Jose, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G02B 3/00 (2006.01); H04N 25/20 (2023.01); H04N 25/532 (2023.01); H04N 25/771 (2023.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/811 (2025.01); G02B 3/0037 (2013.01); H04N 25/20 (2023.01); H04N 25/532 (2023.01); H04N 25/771 (2023.01); H10F 39/18 (2025.01); H10F 39/8033 (2025.01); H10F 39/80373 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01);
Abstract

Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.


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