The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Oct. 12, 2021
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Tongshang Su, Beijing, CN;

Jun Cheng, Beijing, CN;

Bin Zhou, Beijing, CN;

Ce Zhao, Beijing, CN;

Qinghe Wang, Beijing, CN;

Jun Wang, Beijing, CN;

Liangchen Yan, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G09G 3/20 (2006.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); G09G 3/20 (2013.01); H10D 86/0221 (2025.01); H10D 86/441 (2025.01); G09G 2300/0408 (2013.01); G09G 2310/0267 (2013.01); G09G 2310/0275 (2013.01); G09G 2330/021 (2013.01);
Abstract

Provided is a gate driving circuit. The gate driving circuit includes a plurality of first transistors; wherein at least one first target transistor of the plurality of first transistors includes a first light-shielding layer disposed on a side of a base substrate, the first light-shielding layer being made of a conductive material; and a first gate metal layer and a first source/drain metal layer disposed on a side of the first light-shielding layer away from the base substrate; wherein the first light-shielding layer is connected to the first gate metal layer.


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