The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Dec. 13, 2023
Applicant:

Murata Manufacturing Co., Ltd, Kyoto-fu, JP;

Inventors:

Andrew Guyette, Santa Barbara, CA (US);

Neal Fenzi, Santa Barbara, CA (US);

Patrick Turner, Portola Valley, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/13 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/17 (2006.01); H03H 9/56 (2006.01);
U.S. Cl.
CPC ...
H03H 9/132 (2013.01); H03H 3/02 (2013.01); H03H 9/02031 (2013.01); H03H 9/02228 (2013.01); H03H 9/174 (2013.01); H03H 9/176 (2013.01); H03H 9/562 (2013.01); H03H 9/564 (2013.01); H03H 9/568 (2013.01); H03H 2003/023 (2013.01);
Abstract

Filter devices and methods are disclosed. A single-crystal piezoelectric plate is attached to substrate, portions of the piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate. A conductor pattern formed on the piezoelectric plate defines a low band filter including low band shunt resonators and low band series resonators and a high band filter including high band shunt resonators and high band series resonators. Interleaved fingers of interdigital transducers (IDTs) of the low band shunt resonators are disposed on respective diaphragms having a first thickness, interleaved fingers of IDTs of the high band series resonators are disposed on respective diaphragms having a second thickness less than the first thickness, and interleaved fingers of IDTs of the low band series resonators and the high band shunt resonators are disposed on respective diaphragms having thicknesses intermediate the first thickness and the second thickness.


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