The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Oct. 21, 2022
Applicants:

Mazda Motor Corporation, Hiroshima, JP;

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Takayuki Sato, Aki-gun, JP;

Akihiro Noda, Aki-gun, JP;

Masashi Hayashiguchi, Kyoto, JP;

Assignees:

MAZDA MOTOR CORPORATION, Hiroshima, JP;

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02K 11/33 (2016.01); B60K 6/26 (2007.10); H02K 3/52 (2006.01); H02M 7/00 (2006.01); H02M 7/539 (2006.01);
U.S. Cl.
CPC ...
H02K 11/33 (2016.01); H02K 3/522 (2013.01); H02M 7/003 (2013.01); H02M 7/539 (2013.01); B60K 6/26 (2013.01); B60Y 2200/92 (2013.01); H02K 2203/09 (2013.01);
Abstract

An inverter is disposed adjacent to one end of a motor in a rotational axis direction. The inverter includes a plurality of power modules each including a switching element, a smoothing capacitor, busbars that connect the power modules to the smoothing capacitor, and a thin case that accommodates these components. The switching element is constituted by a silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET). The smoothing capacitor and each of the power modules are disposed in an inner portion of the thin case and arranged on the same plane orthogonal to the rotational axis direction.


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