The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Mar. 29, 2021
Lumentum Japan, Inc., Sagamihara, JP;
Kazuki Suga, Sagamihara, JP;
Kouji Nakahara, Tokyo, JP;
Lumentum Japan, Inc., Kanagawa, JP;
Abstract
An optical semiconductor device includes a multi-quantum well layer including well layers and barrier layers alternately overlapping with each other, an optical confinement layer, and a guide layer interposed between the multi-quantum well layer and the optical confinement layer. Each barrier layer is an undoped layer and an outermost layer is one of the barrier layers. The optical confinement layer has a refractive index that is greater than that of the outermost layer and a band gap that is smaller than that of the outermost layer. The guide layer includes a first adjacent layer in contact with the outermost layer and the guide layer is thinner than the optical confinement layer. Each of the optical confinement layer and the guide layer is an n-type semiconductor layer. The first adjacent layer of the guide layer has a band gap that is larger than that of the optical confinement layer.