The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

May. 11, 2023
Applicant:

Photon Wave Co., Ltd., Gyeonggi-do, KR;

Inventors:

Youn Joon Sung, Gyeonggi-do, KR;

Seung Kyu Oh, Gyeonggi-do, KR;

Jae Bong So, Gyeonggi-do, KR;

Gil Jun Lee, Gyeonggi-do, KR;

Won Ho Kim, Gyeonggi-do, KR;

Tae Wan Kwon, Seoul, KR;

Eric Oh, Gyeonggi-do, KR;

Il Gyun Choi, Gyeonggi-do, KR;

Jin Young Jung, Gyeonggi-do, KR;

Assignee:

Photon Wave Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 27/15 (2006.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 27/153 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/32 (2013.01);
Abstract

An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region disposed at an outer side based on an outer side surface of the first electrode, and a ratio of an area of the first etched region and an area of the intermediate layer is 1:0.3 to 1:0.7, and a light emitting element package including the same.


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