The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Sep. 13, 2021
Applicant:

Seoul Viosys Co., Ltd., Gyeonggi-do, KR;

Inventors:

Namgoo Cha, Gyeonggi-do, KR;

Sangmin Kim, Gyeonggi-do, KR;

Yeonkyu Park, Gyeonggi-do, KR;

Assignee:

Seoul Viosys Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01L 25/075 (2006.01); H01L 33/40 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 25/0753 (2013.01); H01L 33/405 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01);
Abstract

A light emitting device is a micro-scale light emitting device including a semiconductor stack, an insulation layer, and a metal reflection layer. The semiconductor stack includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The insulation layer covers upper and side surfaces of the semiconductor stack. The metal reflection layer is disposed on the insulation layer, and covers at least a portion of the side surface of the semiconductor stack. The insulation layer includes a distributed Bragg reflector.


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