The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Nov. 16, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Manoj Mehrotra, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 28/20 (2013.01); H01L 29/0696 (2013.01); H01L 29/402 (2013.01); H01L 29/6653 (2013.01); H01L 29/66689 (2013.01); H01L 29/7816 (2013.01); H01L 29/7851 (2013.01); H01L 29/94 (2013.01);
Abstract
In some implementations, a method includes forming first and second fins on a semiconductor substrate. The method further includes diffusing first and second implants into the semiconductor substrate and first and second fins. The method also includes patterning a field plate on the semiconductor substrate. An active device, such as a laterally-diffused metal-oxide semiconductor field effect (LDMOS) transistor can be formed in this way.