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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12272635 B1

PDFFull Text
Date of Patent:
Apr. 08, 2025

Filed:

Nov. 16, 2023

Semiconductor device and manufacturing method thereof

Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Jae Yoon Noh, Cheongju-si, KR;

Tae Kyung Kim, Cheongju-si, KR;

Hyo Sub Yeom, Cheongju-si, KR;

Jeong Yun Lee, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:

WILLIAM PARK & ASSOCIATES LTD.

Primary Examiner:

Sarah K Salerno

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01); H10B 41/30 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/30 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/27 (2023.02); H10B 41/30 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/30 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 63/84 (2023.02);
Abstract

There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers, which are stacked in an alternating manner; at least one support structure penetrating the stack structure in a substantially vertical manner, the at least one support structure being formed in a contact region; and a contact plug penetrating the stack structure in a substantially vertical manner, the contact plug being formed in the contact region, the contact plug being connected to a contact pad that is disposed on the bottom of the stack structure. The at least one support structure is formed of an oxide layer.

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