The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Apr. 15, 2022
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Seungwon Im, Seoul, KR;

Oseob Jeon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); H01L 23/49838 (2013.01); H01L 23/49866 (2013.01); H01L 24/32 (2013.01); H01L 25/0655 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/35121 (2013.01);
Abstract

In a general aspect, a semiconductor device assembly includes a direct-bonded-metal (DBM) substrate having a ceramic layer, and a first metal layer having a uniform thickness that is disposed on a first surface of the DBM substrate. The assembly further includes a second metal layer disposed on a second surface of the DBM substrate opposite the first surface. The second metal layer includes a first portion having a first thickness, and a second portion having a second thickness, the second thickness being greater than the first thickness. The second portion of the second metal layer includes a metal alloy having a coefficient of thermal expansion (CTE) in a range of 7 to 11 parts-per-million per degrees Celsius (ppm/° C.). The assembly also includes a semiconductor die having a first surface coupled with the second portion of the second metal layer.


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